strain annealing
英 [streɪn əˈniːlɪŋ]
美 [streɪn əˈniːlɪŋ]
网络 应变退火
双语例句
- Study of diffusion energy of strain quantum well with thermal annealing
热退火中应变量子阱的扩散激活能的研究 - Variations of induced magnetic anisotropy, magnetostriction and strain in a metallic glass with annealing under field and tension
金属玻璃在磁场张力退火时感生磁向各异性、磁致伸缩和应变的变化 - Hard elastic polypropylene is formed by crystallized under strain and annealing.
硬弹性聚丙烯是在应变结晶和热结晶两个复合过程中形成的。 - During MA, the powder sample can be introduced lattice strain by high-energy milling, which can be renovated by rapid annealing.
在MA过程中，高能球磨会对粉末样品引入品格畸变和缺陷，而适当条件下的快速退火可以起到修复的作用。 - The fatigue life gages after fatigue at three different cyclic strain amplitudes were annealed at different temperature, and the mechanism of electrical resistance accumulation of fatigue life gage under alternative strain was proposed according to electrical resistance recovery behavior after annealing below recrystallization temperature.
对三种交变应变量循环后的疲劳寿命计在不同温度下进行退火实验，由它们在低于再结晶温度退火后电阻去除量的不同，得出疲劳寿命计在交变应变作用下电阻累积的主要机理。 - Super fine grain under 1 μ m can be obtained after measuring the marginal true strain and recrystallization annealing.
在测定临界真应变和确定再结晶退火制度后，获得了尺寸在1μm以下的超细晶。 - For the minimization of energy, the grains with lowest total energy involving surface energy, strain energy and interface energy will be preferable to grow during annealing so that the films will show corresponding texture ultimately.
依据能量最小化原理，在退火过程中表面能、界面能以及应变能的总和为最小值取向的晶粒将择优生长，薄膜最终也将呈现这种择优取向（或者织构）。 - The strain of the MBE grown silicon layer doped with boron is measured by X-ray double crystal diffraction after rapid thermal annealing at 800-1100 ° C. It is found that the strain is partially relaxed.
利用X射线双晶衍射，测量了经过800&1100℃快速退火处理的重掺硼的分子束外延硅中的应变情况，发现应变部分弛豫。 - This may originate from shear strain induced by in-plane angular mismatch, which forces the film lattice to array in periods after post annealing. It may be responsible for the charge ordering behavior in films mentioned above.
这可能是由于面内角度失配造成了较大的剪切应变，在退火作用下，薄膜晶格形成了面内长程周期排列，这种周期排列可能就是上述薄膜中电荷有序行为的来源。